The authors have investigated the effects of Al doping and annealing on the photoemission spectra and thermal stability of Y2 O3 /Si gate stacks by photoemission spectroscopy and x-ray absorption spectroscopy. They have found that the Si O2 components diffuse into the Y 2 O3 layer by annealing, resulting in the formation of Y silicate; however, the formation of metallic Y silicide is not observed. The changes in valence- and conduction-band offsets by doping Y2 O 3 with Al with respect to both Al concentration and annealing temperature have been systematically investigated. With an increase in the Al concentration, the band offsets and band gaps increase and the conduction-band edges change nonlinearly.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2010 Jan 15|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films