Effects of Al doping and annealing on chemical states and band diagram of Y2 O3 /Si gate stacks studied by photoemission and x-ray absorption spectroscopy

Satoshi Toyoda, Jun Okabayashi, Makoto Komatsu, Masaharu Oshima, Dong Ick Lee, Shiyu Sun, Yun Sun, Piero A. Pianetta, Dmitry Kukuruznyak, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The authors have investigated the effects of Al doping and annealing on the photoemission spectra and thermal stability of Y2 O3 /Si gate stacks by photoemission spectroscopy and x-ray absorption spectroscopy. They have found that the Si O2 components diffuse into the Y 2 O3 layer by annealing, resulting in the formation of Y silicate; however, the formation of metallic Y silicide is not observed. The changes in valence- and conduction-band offsets by doping Y2 O 3 with Al with respect to both Al concentration and annealing temperature have been systematically investigated. With an increase in the Al concentration, the band offsets and band gaps increase and the conduction-band edges change nonlinearly.

Original languageEnglish
Pages (from-to)16-19
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number1
DOIs
Publication statusPublished - 2010 Jan 15
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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