Low-temperature growth-rate activation energy Eg for the growth of Si hydrides and the hydrogen desorption energy Ed from Si surfaces are shown to differ from each other (Eg<Ed) as opposed to Eg = Ed, which has been frequently postulated. A comparative growth study of silane and disilane gas-source molecular beam epitaxy clarifies that this difference arises from non-negligible contributions from the adsorption kinetics in the formation of Eg. Based on this knowledge, a method for determining the true Ed values is presented, and its validity is demonstrated by a successful reduction to an identical Ed value (2.0 eV), which was determined from much less, and mutually different Eg values of silane and disilane growth.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||6 A|
|Publication status||Published - 1997 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)