Effects of adsorption kinetics on the low-temperature growth-rate activation energy in Si gas-source molecular beam epitaxy

Hideki Nakazawa, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-temperature growth-rate activation energy Eg for the growth of Si hydrides and the hydrogen desorption energy Ed from Si surfaces are shown to differ from each other (Eg<Ed) as opposed to Eg = Ed, which has been frequently postulated. A comparative growth study of silane and disilane gas-source molecular beam epitaxy clarifies that this difference arises from non-negligible contributions from the adsorption kinetics in the formation of Eg. Based on this knowledge, a method for determining the true Ed values is presented, and its validity is demonstrated by a successful reduction to an identical Ed value (2.0 eV), which was determined from much less, and mutually different Eg values of silane and disilane growth.

Original languageEnglish
Pages (from-to)L703-L704
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number6 A
DOIs
Publication statusPublished - 1997 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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