Effectiveness of Ga additive to sinterability and electrical properties on Y-doped BaZrO3 proton conductors sintered at 1600°C

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2 Citations (Scopus)

Abstract

Gallium and yttrium co-doped BaZrO3 based proton conductors sintered at 1600°C, in which total dopant concentration is fixed at 15mol%, are fabricated using the conventional solid state reaction method. Ga concentration dependence on sinterability and electrical properties are evaluated. Lattice parameter a, relative density and grain size show local maximum at 1mol% Ga concentration, i.e. BaZr0.85Y 0.14Ga0.01O2.925 (BZY14Gal). Relative density of it is over 95%. It is also found that grain boundary conductivity is drastically improved by 1mol% Ga additives. But bulk conductivity becomes slightly lower than that of BZY15 by 1mol% Ga additives. However, total conductivity of BZY14Gal is highest in the specimens due to high grain boundary conductivity and the value is over 2 x 10-3 Scm-1. On the other hand, 3 and 5mol% Ga-doped specimens show significantly low bulk and grain boundary conductivity. So, the results suggest that the Ga additive is effective for sintering at 1600°C, but the range of concentration is very limited.

Original languageEnglish
Title of host publicationECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
Pages395-400
Number of pages6
Edition51
DOIs
Publication statusPublished - 2008 Dec 1
EventSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number51
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Iguchi, F., Sata, N., & Yugami, H. (2008). Effectiveness of Ga additive to sinterability and electrical properties on Y-doped BaZrO3 proton conductors sintered at 1600°C. In ECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting (51 ed., pp. 395-400). (ECS Transactions; Vol. 16, No. 51). https://doi.org/10.1149/1.3242253