Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing

Jin Aun Ng; Nobuyuki Sugii; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Takeo Hattori; Hiroshi Iwai

doi:10.1587/elex.3.316

Effective mobility and interface-state density of la₂O ₃ nMISFETs after post deposition annealing

Jin Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this paper, we reported the effective mobility and the interface-state density of La₂O₃ nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N₂ or O₂). High effective mobility of 312cm²/Vs and low interface-state density of 6 × 10 ¹⁰ cm^-2/eV were obtained from La₂O₃ nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N₂ ambient for 10 minutes. Gate leakage current density was 6.8 × 10^-6 A/cm². We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.

Original language	English
Pages (from-to)	316-321
Number of pages	6
Journal	IEICE Electronics Express
Volume	3
Issue number	13
DOIs	https://doi.org/10.1587/elex.3.316
Publication status	Published - 2006 Jul 10

Keywords

Interface-state density
LaO
Mobility
PDA
nMISFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing",

abstract = "In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.",

keywords = "Interface-state density, LaO, Mobility, PDA, nMISFET",

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AU - Ng, Jin Aun

AU - Sugii, Nobuyuki

AU - Kakushima, Kuniyuki

AU - Ahmet, Parhat

AU - Tsutsui, Kazuo

AU - Hattori, Takeo

AU - Iwai, Hiroshi

PY - 2006/7/10

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N2 - In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.

AB - In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.

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