Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing

Jin Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journalArticle

13 Citations (Scopus)


In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.

Original languageEnglish
Pages (from-to)316-321
Number of pages6
JournalIEICE Electronics Express
Issue number13
Publication statusPublished - 2006 Jul 10
Externally publishedYes


  • Interface-state density
  • LaO
  • Mobility
  • PDA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ng, J. A., Sugii, N., Kakushima, K., Ahmet, P., Tsutsui, K., Hattori, T., & Iwai, H. (2006). Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing. IEICE Electronics Express, 3(13), 316-321. https://doi.org/10.1587/elex.3.316