Effective length of high-field region in InGaAs-based lattice-matched HEMTs

N. Shigekawa, T. Suemitsu, Y. Umeda

Research output: Contribution to conferencePaperpeer-review

Abstract

We analyzed the bias-voltage dependence of the 1/f-like drain-noise current of highly biased InGaAs-based lattice-matched HEMTs and evaluated the effective length of the high-field region at the drain edge of the device. We found that the effective length was between the nominal barrier thickness and the estimated lateral extension of side-etched region, and that the effective length increased when the gate bias voltage was decreased. This work is likely to provide a semi-quantitative method for determining experimentally the effective length of the high-field region of these HEMTs.

Original languageEnglish
Pages333-338
Number of pages6
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: 2000 Oct 22000 Oct 5

Other

Other27th International Symposium on Compound Semiconductors
Country/TerritoryUnited States
CityMonterey, CA
Period00/10/200/10/5

ASJC Scopus subject areas

  • Engineering(all)

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