Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

Taizo Nakasu, W. Sun, M. Kobayashi, T. Asahi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

Original languageEnglish
Pages (from-to)635-637
Number of pages3
JournalJournal of Crystal Growth
Volume468
DOIs
Publication statusPublished - 2017 Jun 15

Keywords

  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Sapphire
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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