TY - JOUR
T1 - Effect of y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis
AU - Suzuki, Yoshihisa
AU - Nagata, Takahiro
AU - Yamashita, Yoshiyuki
AU - Nabatame, Toshihide
AU - Ogura, Atsushi
AU - Chikyow, Toyohiro
N1 - Funding Information:
This work was partially supported by Precursory Research for Embryonic Science and Technology (PRESTO, JPMJPR1426-14530577), Japan Science and Technology Agency (JST).
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/6
Y1 - 2017/6
N2 - The effects of Y and Mn doping into the rutile TiO2 films on a (100) Ge substrate stack structure were investigated by combinatorial synthesis. Composition spread films were fabricated by combinatorial pulsed laser deposition. Regardless of the dopant concentration, the Mn-doped TiO2 film indicated an amorphous structure. In contrast, the Y-doped TiO2 film had a rutile-type crystal structure below an Y concentration of 11.0 at.%. The high Y concentration enhanced the amorphous structure and Ge diffusion into the TiO2 layer. Although both dopants reduced leakage currents, the effect of Y was greater than that of Mn. The post-deposition annealed Y-doped TiO2 indicated an improvement in the leakage current by three orders of magnitude and electron accumulation at a capacitor structure. The Y doping into TiO2 may provide beneficial effects of good interface control and effective dielectric material for Ge-based capacitors.
AB - The effects of Y and Mn doping into the rutile TiO2 films on a (100) Ge substrate stack structure were investigated by combinatorial synthesis. Composition spread films were fabricated by combinatorial pulsed laser deposition. Regardless of the dopant concentration, the Mn-doped TiO2 film indicated an amorphous structure. In contrast, the Y-doped TiO2 film had a rutile-type crystal structure below an Y concentration of 11.0 at.%. The high Y concentration enhanced the amorphous structure and Ge diffusion into the TiO2 layer. Although both dopants reduced leakage currents, the effect of Y was greater than that of Mn. The post-deposition annealed Y-doped TiO2 indicated an improvement in the leakage current by three orders of magnitude and electron accumulation at a capacitor structure. The Y doping into TiO2 may provide beneficial effects of good interface control and effective dielectric material for Ge-based capacitors.
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U2 - 10.7567/JJAP.56.06GF11
DO - 10.7567/JJAP.56.06GF11
M3 - Article
AN - SCOPUS:85020531897
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06GF11
ER -