Effect of y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis

Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The effects of Y and Mn doping into the rutile TiO2 films on a (100) Ge substrate stack structure were investigated by combinatorial synthesis. Composition spread films were fabricated by combinatorial pulsed laser deposition. Regardless of the dopant concentration, the Mn-doped TiO2 film indicated an amorphous structure. In contrast, the Y-doped TiO2 film had a rutile-type crystal structure below an Y concentration of 11.0 at.%. The high Y concentration enhanced the amorphous structure and Ge diffusion into the TiO2 layer. Although both dopants reduced leakage currents, the effect of Y was greater than that of Mn. The post-deposition annealed Y-doped TiO2 indicated an improvement in the leakage current by three orders of magnitude and electron accumulation at a capacitor structure. The Y doping into TiO2 may provide beneficial effects of good interface control and effective dielectric material for Ge-based capacitors.

Original languageEnglish
Article number06GF11
JournalJapanese journal of applied physics
Issue number6
Publication statusPublished - 2017 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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