Effect of V doping on initial growth of ZnO film on c-face sapphire substrate

Tomohiro Kanematsu, Hiroshi Chiba, Akihiro Watanabe, Shoya Usui, Tomoyuki Kawashima, Katsuyoshi Washio

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of the vanadium (V) doping on the initial growth of ZnO films on a c-face sapphire substrate were investigated. The V-doped ZnO (VZO) films were grown at 200 °C by RF magnetron sputtering with various V concentration ranges. The unit cell volume of the VZO films became larger than that of the ZnO films, but the grain size of the VZO films shrank with a smooth surface. It was also found that the V doping enhanced c-axis alignment at the initial growth in the range of about 10–40 nm thick. Furthermore, it can be considered that V atoms were located at the interstitial sites in the state of V3+ from an analysis of the chemical binding states. Therefore, considering the effect of the V doping on the improvement in rotational symmetry of in-plane orientation, epitaxial alignment to the sapphire substrate was enhanced by the interstitial V incorporation.

Original languageEnglish
Pages (from-to)229-233
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume70
DOIs
Publication statusPublished - 2017 Nov 1

Keywords

  • Initial growth
  • RF magnetron sputtering
  • Sapphire substrate
  • Vanadium doping
  • Zinc oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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