Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

M. Suzuno, Y. Ugajin, S. Murase, T. Suemasu, M. Uchikoshi, M. Isshiki

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16 Citations (Scopus)

Abstract

Intentionally undoped p -type Β -FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of Β -FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the Β -FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.

Original languageEnglish
Article number103706
JournalJournal of Applied Physics
Volume102
Issue number10
DOIs
Publication statusPublished - 2007 Dec 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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