Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media

M. Takahashi; A. Kikuchi; J. Nakai; H. Shoji

doi:10.1016/S0304-8853(98)00406-5

Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media

M. Takahashi, A. Kikuchi, J. Nakai, H. Shoji

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The microstructure of Cr segregation in CoCrTa media fabricated under the ultra clean sputtering process was examined by using transmission electron microscopy and electron energy loss spectroscopy. As a result, by applying the UC process: (1) A clear Cr segregated grain boundary is formed from the interface between the Cr underlayer to the top surface of the magnetic layer, leading to the reduction of intergranular exchange coupling. (2) The diffusion of the Cr atom from inner to outer grain is enhanced, resulting in the inducement of high H_k^grain. (3) The oxygen content is reduced to less than about 10¹⁹ atoms/cm³, which is 2 or 3 orders of magnitude lower than that in n-CoCrTa.

Original language	English
Pages (from-to)	79-84
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	193
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(98)00406-5
Publication status	Published - 1999

Keywords

Intergranular exchange coupling
Magnetocrystalline anisotropy field
Oxygen content
Segregated boundary
Thin film media

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(98)00406-5

Cite this

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title = "Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media",

abstract = "The microstructure of Cr segregation in CoCrTa media fabricated under the ultra clean sputtering process was examined by using transmission electron microscopy and electron energy loss spectroscopy. As a result, by applying the UC process: (1) A clear Cr segregated grain boundary is formed from the interface between the Cr underlayer to the top surface of the magnetic layer, leading to the reduction of intergranular exchange coupling. (2) The diffusion of the Cr atom from inner to outer grain is enhanced, resulting in the inducement of high Hkgrain. (3) The oxygen content is reduced to less than about 1019 atoms/cm3, which is 2 or 3 orders of magnitude lower than that in n-CoCrTa.",

keywords = "Intergranular exchange coupling, Magnetocrystalline anisotropy field, Oxygen content, Segregated boundary, Thin film media",

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pages = "79--84",

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TY - JOUR

T1 - Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media

AU - Takahashi, M.

AU - Kikuchi, A.

AU - Nakai, J.

AU - Shoji, H.

PY - 1999

Y1 - 1999

N2 - The microstructure of Cr segregation in CoCrTa media fabricated under the ultra clean sputtering process was examined by using transmission electron microscopy and electron energy loss spectroscopy. As a result, by applying the UC process: (1) A clear Cr segregated grain boundary is formed from the interface between the Cr underlayer to the top surface of the magnetic layer, leading to the reduction of intergranular exchange coupling. (2) The diffusion of the Cr atom from inner to outer grain is enhanced, resulting in the inducement of high Hkgrain. (3) The oxygen content is reduced to less than about 1019 atoms/cm3, which is 2 or 3 orders of magnitude lower than that in n-CoCrTa.

AB - The microstructure of Cr segregation in CoCrTa media fabricated under the ultra clean sputtering process was examined by using transmission electron microscopy and electron energy loss spectroscopy. As a result, by applying the UC process: (1) A clear Cr segregated grain boundary is formed from the interface between the Cr underlayer to the top surface of the magnetic layer, leading to the reduction of intergranular exchange coupling. (2) The diffusion of the Cr atom from inner to outer grain is enhanced, resulting in the inducement of high Hkgrain. (3) The oxygen content is reduced to less than about 1019 atoms/cm3, which is 2 or 3 orders of magnitude lower than that in n-CoCrTa.

KW - Intergranular exchange coupling

KW - Magnetocrystalline anisotropy field

KW - Oxygen content

KW - Segregated boundary

KW - Thin film media

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

ER -

Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media

Abstract

Keywords

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