Effect of ultraclean sputtering process on Cr segregation in CoCrTa thin film media

M. Takahashi, A. Kikuchi, J. Nakai, H. Shoji

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The microstructure of Cr segregation in CoCrTa media fabricated under the ultra clean sputtering process was examined by using transmission electron microscopy and electron energy loss spectroscopy. As a result, by applying the UC process: (1) A clear Cr segregated grain boundary is formed from the interface between the Cr underlayer to the top surface of the magnetic layer, leading to the reduction of intergranular exchange coupling. (2) The diffusion of the Cr atom from inner to outer grain is enhanced, resulting in the inducement of high Hkgrain. (3) The oxygen content is reduced to less than about 1019 atoms/cm3, which is 2 or 3 orders of magnitude lower than that in n-CoCrTa.

    Original languageEnglish
    Pages (from-to)79-84
    Number of pages6
    JournalJournal of Magnetism and Magnetic Materials
    Volume193
    Issue number1-3
    DOIs
    Publication statusPublished - 1999 Jan 1

    Keywords

    • Intergranular exchange coupling
    • Magnetocrystalline anisotropy field
    • Oxygen content
    • Segregated boundary
    • Thin film media

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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