Effect of transition metal impurities on the photoluminescence of deformed Si crystal

T. Okuyama, M. Suezawa, Ichiro Yonenaga, K. Sumino

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Effect of transition metal impurities like Cu, Ni and Fe on the D-band photoluminescence (PL) in deformed silicon crystal was investigated. In the case of Cu, the intensity of D-band PL has a maximum with respect to the concentration of Cu. This result is consistent to that of Higgs et al. who observed a similar behavior for extrinsic stacking faults. Electron spin resonance (ESR) study shows that the intensity of ESR absorption due to Si-K1 centers shows anti-correlated behavior to that of photoluminescence with respect to the concentration of Cu. This strongly suggests that Cu at intermediate concentration passivates nonradiative recombination centers (Si-K1). Intensity of D-band PL does not depend on the concentrations of Fe and Ni, contrary to Higgs et al.'s result.

Original languageEnglish
Pages (from-to)1213-1218
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 3
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Okuyama, T., Suezawa, M., Yonenaga, I., & Sumino, K. (1995). Effect of transition metal impurities on the photoluminescence of deformed Si crystal. Materials Science Forum, 196-201(pt 3), 1213-1218.