Abstract
The effect of a thin Si layer insertion at W/La2O3 interface on the electrical characteristics of MOS capacitors and transistors is investigated. A suppression in the EOT increase can be obtained with Si insertion, indicating the inhibition of diffusion of oxygen atoms into La 2O3 layer by forming an amorphous La-silicate layer at the W/La2O3 interface. In addition, positive shifts in V fb and Vth caused by Si insertion implies the formation of amorphous La-silicate layer at the top of La2O3 dielectrics reduces the positive fixed charges induced by the metal electrode. Consequently, a large improvement in mobility has been confirmed for both at peak value and at high Eeff of 1 MV/cm with Si inserted nFETs. Although a degradation trend on EOT scaling has been observed, the insertion of thin Si layer is effective in pushing the scaling limit.
Original language | English |
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Pages (from-to) | 1330-1333 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 Jul |
Externally published | Yes |
Keywords
- Direct contact
- Effective mobility
- High-k
- La-silicate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering