Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method

Naoki Wakiya, Ji Won Moon, Takanori Kiguchi, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.

Original languageEnglish
Pages97-100
Number of pages4
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz
Duration: 1998 Aug 241998 Aug 27

Other

OtherProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
CityMontreaux, Switz
Period98/8/2498/8/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Wakiya, N., Moon, J. W., Kiguchi, T., Shinozaki, K., & Mizutani, N. (1998). Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. 97-100. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .