Abstract
Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.
| Original language | English |
|---|---|
| Pages | 97-100 |
| Number of pages | 4 |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: 1998 Aug 24 → 1998 Aug 27 |
Other
| Other | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) |
|---|---|
| City | Montreaux, Switz |
| Period | 98/8/24 → 98/8/27 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Wakiya, N., Moon, J. W., Kiguchi, T., Shinozaki, K., & Mizutani, N. (1998). Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. 97-100. Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .