Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method

Naoki Wakiya; Ji Won Moon; Takanori Kiguchi; Kazuo Shinozaki; Nobuyasu Mizutani

Effect of thickness on the dielectric properties of Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin film prepared by sol-gel method

Naoki Wakiya, Ji Won Moon, Takanori Kiguchi, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to conference › Paper › peer-review

Abstract

Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.

Original language	English
Pages	97-100
Number of pages	4
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: 1998 Aug 24 → 1998 Aug 27

Other

Other	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	98/8/24 → 98/8/27

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Effect of thickness on the dielectric properties of Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin film prepared by sol-gel method. / Wakiya, Naoki; Moon, Ji Won; Kiguchi, Takanori; Shinozaki, Kazuo; Mizutani, Nobuyasu.

1998. 97-100 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz.

Research output: Contribution to conference › Paper › peer-review

@conference{5f81731139e746a8bd991ac09b3348f4,

title = "Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method",

abstract = "Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.",

author = "Naoki Wakiya and Moon, {Ji Won} and Takanori Kiguchi and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "97--100",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

}

TY - CONF

T1 - Effect of thickness on the dielectric properties of Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method

AU - Wakiya, Naoki

AU - Moon, Ji Won

AU - Kiguchi, Takanori

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.

AB - Dependence of thickness on the dielectric and ferroelectric characteristics were examined for Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. Dialectric constant was decreased with the decrease of thickness, however, frequency dispersion of dielectric constant which is characteristic for relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts implies that size-effect are also observed for relaxor ferroelectrics.

UR - http://www.scopus.com/inward/record.url?scp=0032263297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032263297&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032263297

SP - 97

EP - 100

T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Effect of thickness on the dielectric properties of Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin film prepared by sol-gel method

Abstract

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