Effect of thickness on structure and optoelectrical properties of Ti doped indium tin oxide thin films deposited by RF magnetron sputtering

Chunhong Ma, Shina Li, Ruixin Ma, Komin Shu

Research output: Contribution to journalArticle

Abstract

Titanium-doped indium tin oxide (ITO:Ti) thin films were prepared on glass substrates with various film thicknesses (50-360 nm) by radio frequency (RF) magnetron sputtering using one piece of ceramic target material. The effects of thickness on the structural, surface morphology, electrical and optical properties of ITO:Ti films were investigated by means of X-ray diffraction (XRD), Atomic Force Microscope (AFM), ultraviolet (UV)-visible spectroscopy and electrical measurements. XRD patterns show the highly oriented (400) direction. With the increasing thickness, the crystallization enhances and grain size increases, Meanwhile, the film becomes more dense. As the film thickness increasing, the RMS roughness, average roughness and resistivity of the thin film decreases and then increases. RMS roughness is the lowest when the thickness is 250 nm. The lowest resistivity of the 200 nm thick film is 2.1×10-3 Ω·cm. The transmittance of different thick film is more than 89% in the visible light range with different thickness.

Original languageEnglish
Pages (from-to)503-507
Number of pages5
JournalFenmo Yejin Cailiao Kexue yu Gongcheng/Materials Science and Engineering of Powder Metallurgy
Volume21
Issue number3
Publication statusPublished - 2016 Jun 1
Externally publishedYes

Keywords

  • Film thickness
  • ITO:Ti film
  • Photoelectric property
  • Radio frequency magnetron sputtering
  • Semiconductor

ASJC Scopus subject areas

  • Metals and Alloys

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