Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Shi na Li; Rui xin Ma; Chun hong Ma; Dong ran Li; Yu qin Xiao; Liang wei He; Hong min Zhu

doi:10.1007/s11801-013-2411-1

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Shi na Li, Rui xin Ma, Chun hong Ma, Dong ran Li, Yu qin Xiao, Liang wei He, Hong min Zhu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10^-4Ω·cm^-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×10²¹ cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV.

Original language	English
Pages (from-to)	198-200
Number of pages	3
Journal	Optoelectronics Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1007/s11801-013-2411-1
Publication status	Published - 2013 May
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s11801-013-2411-1

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title = "Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering",

abstract = "Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV.",

author = "Li, {Shi na} and Ma, {Rui xin} and Ma, {Chun hong} and Li, {Dong ran} and Xiao, {Yu qin} and He, {Liang wei} and Zhu, {Hong min}",

year = "2013",

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doi = "10.1007/s11801-013-2411-1",

language = "English",

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T1 - Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

AU - Li, Shi na

AU - Ma, Rui xin

AU - Ma, Chun hong

AU - Li, Dong ran

AU - Xiao, Yu qin

AU - He, Liang wei

AU - Zhu, Hong min

PY - 2013/5

Y1 - 2013/5

N2 - Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV.

AB - Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV.

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JF - Optoelectronics Letters

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ER -

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Abstract

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