Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering