Effect of thermal annealing on band edge adsorption spectrum of arsenic-ion-implanted GaAs

Yasuyuki Nagai, Takashi Kunimoto, Keigo Nagasaka, Hiroyuki Nojiri, Mitsuhiro Motokawa, Fumihiro Matsukura, Tomasz Dietl, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report the effects of annealing temperature on the near-band-gap transmittance, the absorption coefficient, and the evolution of shallow-level defects of arsenic-ion-implanted GaAs (hereafter referred to as GaAs:As+) using Fourier-transform infrared spectroscopy. The maximum above-band-gap transmittance and absorption coefficient are determined to be 0.4 and 6 × 103 cm-1, respectively. An anomalous absorption peak at the photon energy of 1.37-1.4 eV for the GaAs:As+ samples annealed at lower than 500°C is observed. By either fitting the absorption curve, the band-gap energy of rapid-thermal-annealed GaAs:As+ is evaluated, which blue shifts from 1.36 eV to 1.41 eV as the annealing temperature increases from 300°C to 800°C. The slightly rising absorption spectra at the near-band-gap region suggest the existence of defects and scattering centers. The activation energies and formatting mechanisms of the dense defects in the Rapid-thermal-annealed GaAs:As+ samples were identified. By characterizing the differential absorption spectra, the eVolution of some defect-related absorption bands during the high-temperature annealing process were observed and the correlated structural phenomena were explained.

Original languageEnglish
Pages (from-to)6226-6230
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 2001 Nov


  • Absorption
  • Arsenic-ion-implanted
  • Band-gap energy
  • Defect level
  • GaAs:As
  • Thermal annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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