Effect of the quantum domain wall on conductance quantization and magnetoresistance in magnetic point contacts

Hiroshi Imamura, Nobuhiko Kobayashi, Saburo Takahashi, Sadamichi Maekawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electron transport through a magnetic point contact is studied with special attention to the effect of an atomic scale domain wall. When the magnetizations of left and light electrodes are antiparallel, the atomic scale domain wall is created inside the contact. We show that the spin precession of conduction electron is forbidden in such an atomic scale domain wall and the sequence of quantized conductances differs from that of the single domain point contact. We also show that the magnetoresistance is strongly enhanced for the narrow point contact and oscillates with the conductance.

Original languageEnglish
Pages (from-to)107-113
Number of pages7
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume84
Issue number1-2
DOIs
Publication statusPublished - 2001 Jun 5

Keywords

  • Conductance quantization
  • Domain wall
  • Point contact
  • Spin electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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