Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

Chuanhong Fan; Osamu Asai; Ken Suzuki; Hideo Miura

doi:10.1109/EMAP.2012.6507865

Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

Chuanhong Fan, Osamu Asai, Ken Suzuki, Hideo Miura

ENG - Fracture and Reliability Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Electroplated copper thin films have become indispensable for the interconnections in next-generation semiconductor devices because of its low electric resistivity and high thermal conductivity. Since the electrical properties of the electroplated copper thin films vary drastically depending on their micro texture, the effect of the base layer material (a copper diffusion preventing layer and an electroplating seed layer) on the crystallinity of the electroplated copper thin films was investigated quantitatively in order to assure and improve the performance and reliability of electroplated copper thin-film interconnections.

Original language	English
Title of host publication	14th International Conference on Electronic Materials and Packaging, EMAP 2012
DOIs	https://doi.org/10.1109/EMAP.2012.6507865
Publication status	Published - 2012 Dec 1
Event	14th International Conference on Electronic Materials and Packaging, EMAP 2012 - Lantau Island, Hong Kong Duration: 2012 Dec 13 → 2012 Dec 16

Publication series

Name	14th International Conference on Electronic Materials and Packaging, EMAP 2012

Other

Other	14th International Conference on Electronic Materials and Packaging, EMAP 2012
Country	Hong Kong
City	Lantau Island
Period	12/12/13 → 12/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EMAP.2012.6507865

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Cite this

Fan, C., Asai, O., Suzuki, K., & Miura, H. (2012). Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. In 14th International Conference on Electronic Materials and Packaging, EMAP 2012 [6507865] (14th International Conference on Electronic Materials and Packaging, EMAP 2012). https://doi.org/10.1109/EMAP.2012.6507865

Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. / Fan, Chuanhong; Asai, Osamu; Suzuki, Ken ; Miura, Hideo.

14th International Conference on Electronic Materials and Packaging, EMAP 2012. 2012. 6507865 (14th International Conference on Electronic Materials and Packaging, EMAP 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, C, Asai, O, Suzuki, K & Miura, H 2012, Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. in 14th International Conference on Electronic Materials and Packaging, EMAP 2012., 6507865, 14th International Conference on Electronic Materials and Packaging, EMAP 2012, 14th International Conference on Electronic Materials and Packaging, EMAP 2012, Lantau Island, Hong Kong, 12/12/13. https://doi.org/10.1109/EMAP.2012.6507865

Fan C, Asai O, Suzuki K , Miura H. Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. In 14th International Conference on Electronic Materials and Packaging, EMAP 2012. 2012. 6507865. (14th International Conference on Electronic Materials and Packaging, EMAP 2012). https://doi.org/10.1109/EMAP.2012.6507865

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AB - Electroplated copper thin films have become indispensable for the interconnections in next-generation semiconductor devices because of its low electric resistivity and high thermal conductivity. Since the electrical properties of the electroplated copper thin films vary drastically depending on their micro texture, the effect of the base layer material (a copper diffusion preventing layer and an electroplating seed layer) on the crystallinity of the electroplated copper thin films was investigated quantitatively in order to assure and improve the performance and reliability of electroplated copper thin-film interconnections.

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