We show direct evidence for importance of the interface resistance to electrically create large spin accumulation in silicon (Si). With increasing the thickness of the tunnel barrier in CoFe/MgO/n +-Si devices, a marked enhancement of spin accumulation signals can be observed in the electrical Hanle-effect measurements. To demonstrate room-temperature detection of the spin signals in three-terminal methods, the influence of the spin absorption from Si into CoFe through a tunnel barrier should be taken into account.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)