Effect of the interface on the electrical properties of an indium zinc oxide/SiOx multilayer

Zhiyong Qiu, Ri ichi Murakami, Daisuke Yonekura, Jirou Ueno

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    In this work, indium zinc oxide (IZO) films have been deposited on a polyethylene terephthalate substrate coated with an SiOx film. Based on a comparative investigation of an IZO monolayer and an IZO/SiOx multilayer, it is shown that oxygen has a great effect on the electrical properties of the thin films. A mechanism is described to explain the influence of the introduced SiOx buffer layer. It is considered that an interfacial layer has come into being at the interface between the SiOx layer and IZO layer, and the properties of this layer have been evaluated. Moreover, the electrical properties of the IZO/SiOx multilayer have been successfully improved by controlling the oxygen content of the interfacial layer.

    Original languageEnglish
    Pages (from-to)7259-7263
    Number of pages5
    JournalThin Solid Films
    Volume515
    Issue number18
    DOIs
    Publication statusPublished - 2007 Jun 25

    Keywords

    • Electrical properties and measurements
    • Indium zinc oxide
    • Multilayer
    • Silicon oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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