Effect of the hot pressing on the magnetic-field and temperature dependences of flux pinning for SiC-doped MgB2 tape

H. Kuwashima, N. Nanato, S. B. Kim, S. Murase, Y. Yamada, A. Nitta, K. Tachikawa, G. Nishijima, K. Watanabe

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

To understand the effects of the hot pressing on the pinning behavior for the SiC doped MgB2 tape wire, magnetic field and temperature dependences on a critical current density Jc and the pinning force have been studied. The MgB2 tapes were fabricated using an in situ powder-in-tube (PIT) method, the hot pressing process with nano-SiC powders and the carbon steel sheath. Jc of the hot pressing processed wire is enhanced especially at low field compared with that of the no hot-pressed wire. It is suggested that the enhancement of Jc is caused by the improvement of the MgB2 grain connectivity came from the hot pressing. The pinning analysis using the pinning models of a surface pinning and a normal point pinning lead to that the scaled curve of the pinning force for the SiC-doped MgB2 tape with the hot pressing process showed anisotropy in a lower field. This result suggests that the pinning center of the hot pressing processed MgB2 wire forms into inequi-axial shape, which is different from that in the tape without the hot pressing having the equi-axial pinning center in our previous report. It was also found that the scaled pinning force of the SiC-doped MgB2 tape with the hot pressing is larger than the surface pinning model in a higher field. This suggests that the pinning force was enhanced by the hot pressing in a higher field.

Original languageEnglish
Pages (from-to)1515-1518
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume469
Issue number15-20
DOIs
Publication statusPublished - 2009 Oct 15

Keywords

  • Flux pinning
  • Hot pressing process
  • MgB superconductor
  • Nano-SiC addition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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