Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

S. Keller, S. F. Chichibu, M. S. Minsky, E. Hu, U. K. Mishra, S. P. DenBaars

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)

Abstract

InGaN/GaN single and multi quantum wells have been grown by metal-organic chemical vapor deposition, varying the growth rate of well and barrier layers as well as the Si-doping of the GaN barriers. Separately, the effect of these growth parameters on the surface morphology of thin GaN and InGaN layers grown under the same conditions had been studied. The surface morphology of the layers strongly influenced the structural properties of the multi quantum wells. The optical properties seemed to be less affected by the observed layer thickness fluctuations in the 200-500 nm range rather than by variations in the indium composition on a shorter length scale.

Original languageEnglish
Pages (from-to)258-264
Number of pages7
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
Publication statusPublished - 1998 Dec 15
Externally publishedYes

Keywords

  • Atomic force microscopy
  • GaN
  • InGaN
  • MOCVD
  • Photoluminescence
  • Photoluminescence excitation spectroscopy
  • Quantum wells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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