Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

Yoshinari Kimura, Hironori Tohmyoh

Research output: Contribution to journalArticlepeer-review

Abstract

Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current−voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 × 103 to 1.4 × 107 Ω/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current−voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics.

Original languageEnglish
Article number114469
JournalScripta Materialia
Volume210
DOIs
Publication statusPublished - 2022 Mar 15

Keywords

  • Copper
  • Electrical resistivity
  • Nanostructure
  • Semiconductor devices
  • Stress-induced migration

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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