Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

Yoshinari Kimura; Hironori Tohmyoh

doi:10.1016/j.scriptamat.2021.114469

Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

Yoshinari Kimura, Hironori Tohmyoh

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current−voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 × 10³ to 1.4 × 10⁷ Ω/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current−voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics.

Original language	English
Article number	114469
Journal	Scripta Materialia
Volume	210
DOIs	https://doi.org/10.1016/j.scriptamat.2021.114469
Publication status	Published - 2022 Mar 15

Keywords

Copper
Electrical resistivity
Nanostructure
Semiconductor devices
Stress-induced migration

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2021.114469

Cite this

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title = "Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics",

abstract = "Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current−voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 × 103 to 1.4 × 107 Ω/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current−voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics.",

keywords = "Copper, Electrical resistivity, Nanostructure, Semiconductor devices, Stress-induced migration",

author = "Yoshinari Kimura and Hironori Tohmyoh",

note = "Funding Information: Part of this work was performed at the Micro/Nano-Machining Research and Education Center, Tohoku University. Publisher Copyright: {\textcopyright} 2021 Acta Materialia Inc.",

year = "2022",

month = mar,

day = "15",

doi = "10.1016/j.scriptamat.2021.114469",

language = "English",

volume = "210",

journal = "Scripta Materialia",

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TY - JOUR

T1 - Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

AU - Kimura, Yoshinari

AU - Tohmyoh, Hironori

PY - 2022/3/15

Y1 - 2022/3/15

N2 - Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current−voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 × 103 to 1.4 × 107 Ω/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current−voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics.

AB - Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current−voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 × 103 to 1.4 × 107 Ω/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current−voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics.

KW - Copper

KW - Electrical resistivity

KW - Nanostructure

KW - Semiconductor devices

KW - Stress-induced migration

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DO - 10.1016/j.scriptamat.2021.114469

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JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

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ER -

Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

Abstract

Keywords

ASJC Scopus subject areas

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