TY - GEN
T1 - Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections
AU - Sakamoto, Hayato
AU - Kato, Takeru
AU - Suzuki, Ken
AU - Miura, Hideo
PY - 2016/11/28
Y1 - 2016/11/28
N2 - In this study, the effect of the crystallinity and the characteristics of grain boundaries on the grain boundary diffusion was investigated experimentally. The crystallinity and characteristics of the grain boundaries were evaluated by using an EBSD (Electron Back-scattered Diffraction) method. The atomic diffusion of the grain boundary was also observed as the change of the surface morphology of interconnections by SPM (Scanning Probe Microscopy). It was found that the main diffusion paths during EM (Electro Migration) was random grain boundaries. The grain boundaries with low quality, regardless of crystallographic orientation, were also the main atomic diffusion paths.
AB - In this study, the effect of the crystallinity and the characteristics of grain boundaries on the grain boundary diffusion was investigated experimentally. The crystallinity and characteristics of the grain boundaries were evaluated by using an EBSD (Electron Back-scattered Diffraction) method. The atomic diffusion of the grain boundary was also observed as the change of the surface morphology of interconnections by SPM (Scanning Probe Microscopy). It was found that the main diffusion paths during EM (Electro Migration) was random grain boundaries. The grain boundaries with low quality, regardless of crystallographic orientation, were also the main atomic diffusion paths.
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U2 - 10.1109/IEMT.2016.7761937
DO - 10.1109/IEMT.2016.7761937
M3 - Conference contribution
AN - SCOPUS:85005990030
T3 - Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
BT - 2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 37th IEEE International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016
Y2 - 20 September 2016 through 22 September 2016
ER -