Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections

Hayato Sakamoto; Takeru Kato; Ken Suzuki; Hideo Miura

doi:10.1109/IEMT.2016.7761937

Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections

Hayato Sakamoto, Takeru Kato, Ken Suzuki, Hideo Miura

ENG - Fracture and Reliability Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, the effect of the crystallinity and the characteristics of grain boundaries on the grain boundary diffusion was investigated experimentally. The crystallinity and characteristics of the grain boundaries were evaluated by using an EBSD (Electron Back-scattered Diffraction) method. The atomic diffusion of the grain boundary was also observed as the change of the surface morphology of interconnections by SPM (Scanning Probe Microscopy). It was found that the main diffusion paths during EM (Electro Migration) was random grain boundaries. The grain boundaries with low quality, regardless of crystallographic orientation, were also the main atomic diffusion paths.

Original language	English
Title of host publication	2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509034437
DOIs	https://doi.org/10.1109/IEMT.2016.7761937
Publication status	Published - 2016 Nov 28
Event	37th IEEE International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016 - Georgetown, Penang, Malaysia Duration: 2016 Sep 20 → 2016 Sep 22

Publication series

Name	Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
Volume	2016-November
ISSN (Print)	1089-8190

Other

Other	37th IEEE International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016
Country	Malaysia
City	Georgetown, Penang
Period	16/9/20 → 16/9/22

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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Sakamoto, H., Kato, T., Suzuki, K., & Miura, H. (2016). Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections. In 2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016 [7761937] (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEMT.2016.7761937

Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections. / Sakamoto, Hayato; Kato, Takeru; Suzuki, Ken ; Miura, Hideo.

2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7761937 (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sakamoto, H, Kato, T, Suzuki, K & Miura, H 2016, Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections. in 2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016., 7761937, Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., 37th IEEE International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016, Georgetown, Penang, Malaysia, 16/9/20. https://doi.org/10.1109/IEMT.2016.7761937

Sakamoto H, Kato T, Suzuki K , Miura H. Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections. In 2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7761937. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium). https://doi.org/10.1109/IEMT.2016.7761937

Sakamoto, Hayato ; Kato, Takeru ; Suzuki, Ken ; Miura, Hideo. / Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections. 2016 IEEE 37th International Electronics Manufacturing Technology, IEMT 2016 and 18th Electronics Materials and Packaging Conference, EMAP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium).

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abstract = "In this study, the effect of the crystallinity and the characteristics of grain boundaries on the grain boundary diffusion was investigated experimentally. The crystallinity and characteristics of the grain boundaries were evaluated by using an EBSD (Electron Back-scattered Diffraction) method. The atomic diffusion of the grain boundary was also observed as the change of the surface morphology of interconnections by SPM (Scanning Probe Microscopy). It was found that the main diffusion paths during EM (Electro Migration) was random grain boundaries. The grain boundaries with low quality, regardless of crystallographic orientation, were also the main atomic diffusion paths.",

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AB - In this study, the effect of the crystallinity and the characteristics of grain boundaries on the grain boundary diffusion was investigated experimentally. The crystallinity and characteristics of the grain boundaries were evaluated by using an EBSD (Electron Back-scattered Diffraction) method. The atomic diffusion of the grain boundary was also observed as the change of the surface morphology of interconnections by SPM (Scanning Probe Microscopy). It was found that the main diffusion paths during EM (Electro Migration) was random grain boundaries. The grain boundaries with low quality, regardless of crystallographic orientation, were also the main atomic diffusion paths.

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Effect of the crystallinity of a grain boundary on the self-diffusion of copper in thin-film interconnections

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