Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

S. Keller; S. B. Fleischer; Shigefusa Chichibu; J. E. Bowers; U. K. Mishra; S. P. DenBaars

doi:10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

S. Keller, S. B. Fleischer, Shigefusa Chichibu, J. E. Bowers, U. K. Mishra, S. P. DenBaars

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4
Publication status	Published - 1999 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

Cite this

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abstract = "The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The {"}funneling{"} effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.",

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T1 - Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

AU - Keller, S.

AU - Fleischer, S. B.

AU - Chichibu, Shigefusa

AU - Bowers, J. E.

AU - Mishra, U. K.

AU - DenBaars, S. P.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

AB - The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

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Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

Abstract

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