Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

S. Keller, S. B. Fleischer, Shigefusa Chichibu, J. E. Bowers, U. K. Mishra, S. P. DenBaars

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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