Abstract
Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.
Original language | English |
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Pages (from-to) | 761-764 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 21 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2004 Mar |
Externally published | Yes |
Event | Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18 |
Keywords
- Ballistic transport
- Bend resistance
- InSb
- Quantum well
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics