Effect of temperature on ballistic transport in InSb quantum wells

N. Goel; S. J. Chung; M. B. Santos; K. Suzuki; S. Miyashita; Y. Hirayama

doi:10.1016/j.physe.2003.11.116

Effect of temperature on ballistic transport in InSb quantum wells

N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with Al_xIn _1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

Original language	English
Pages (from-to)	761-764
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.116
Publication status	Published - 2004 Mar 1
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

Ballistic transport
Bend resistance
InSb
Quantum well

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

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title = "Effect of temperature on ballistic transport in InSb quantum wells",

abstract = "Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.",

keywords = "Ballistic transport, Bend resistance, InSb, Quantum well",

author = "N. Goel and Chung, {S. J.} and Santos, {M. B.} and K. Suzuki and S. Miyashita and Y. Hirayama",

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T1 - Effect of temperature on ballistic transport in InSb quantum wells

AU - Goel, N.

AU - Chung, S. J.

AU - Santos, M. B.

AU - Suzuki, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

AB - Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

KW - Ballistic transport

KW - Bend resistance

KW - InSb

KW - Quantum well

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U2 - 10.1016/j.physe.2003.11.116

DO - 10.1016/j.physe.2003.11.116

M3 - Conference article

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SP - 761

EP - 764

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

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T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

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