Effect of temperature on ballistic transport in InSb quantum wells

N. Goel; S. J. Chung; M. B. Santos; K. Suzuki; S. Miyashita; Y. Hirayama

doi:10.1016/j.physe.2003.11.116

Effect of temperature on ballistic transport in InSb quantum wells

N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with Al_xIn _1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

Original language	English
Pages (from-to)	761-764
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.116
Publication status	Published - 2004 Mar
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

Ballistic transport
Bend resistance
InSb
Quantum well

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.116

Cite this

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title = "Effect of temperature on ballistic transport in InSb quantum wells",

abstract = "Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.",

keywords = "Ballistic transport, Bend resistance, InSb, Quantum well",

author = "N. Goel and Chung, {S. J.} and Santos, {M. B.} and K. Suzuki and S. Miyashita and Y. Hirayama",

note = "Funding Information: The University of Oklahoma group would like to acknowledge J.C. Keay, T.D. Mishima, M.B. Johnson, J.C. Chokomakoua, J.L. Hicks and S.Q. Murphy for their help during this work. One author, N. Goel, would like to acknowledge the Graduate College and Graduate Student Senate at the University of Oklahoma for travel and research grants. This work is supported by the National Science Foundation under Grants No. DMR-0080054, DMR-0209371 and ECS-9733966.; Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.116",

language = "English",

volume = "21",

pages = "761--764",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

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TY - JOUR

T1 - Effect of temperature on ballistic transport in InSb quantum wells

AU - Goel, N.

AU - Chung, S. J.

AU - Santos, M. B.

AU - Suzuki, K.

AU - Miyashita, S.

AU - Hirayama, Y.

N1 - Funding Information: The University of Oklahoma group would like to acknowledge J.C. Keay, T.D. Mishima, M.B. Johnson, J.C. Chokomakoua, J.L. Hicks and S.Q. Murphy for their help during this work. One author, N. Goel, would like to acknowledge the Graduate College and Graduate Student Senate at the University of Oklahoma for travel and research grants. This work is supported by the National Science Foundation under Grants No. DMR-0080054, DMR-0209371 and ECS-9733966.

PY - 2004/3

Y1 - 2004/3

N2 - Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

AB - Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

KW - Ballistic transport

KW - Bend resistance

KW - InSb

KW - Quantum well

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U2 - 10.1016/j.physe.2003.11.116

DO - 10.1016/j.physe.2003.11.116

M3 - Conference article

AN - SCOPUS:1642406546

VL - 21

SP - 761

EP - 764

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Effect of temperature on ballistic transport in InSb quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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