Effect of temperature on ballistic transport in InSb quantum wells

N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with AlxIn 1-xSb barriers. Negative bend resistance is observed at temperatures between ~1.5 and ~200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.

Original languageEnglish
Pages (from-to)761-764
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Ballistic transport
  • Bend resistance
  • InSb
  • Quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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