EFFECT OF TANGENTIAL MAGNETIC FIELD ON THE TWO-DIMENSIONAL ELECTRON TRANSPORT IN N-AlGaAs/GaAs SUPERLATTICES AND HETERO-INTERFACES.

H. Sakaki, Hideo Ohno, S. Nishi, J. Yoshino

Research output: Contribution to journalConference articlepeer-review

Abstract

Magnetoresistance DELTA rho / rho o of a two dimensional electron gas as N-AlGaAs/GaAs heterojunction interfaces and superlattices is studied for the magnetic field, B//y, parallel to heterojunctions. DELTA rho / rho o at the interface is found to contain a term having linear dependence both on B//y and on electric field parallel to the current, E//x. This is ascribed to the deformation of wavefunction by the Lorentz force, which affects the electron scattering by impurities distributed only on one side of the interface. Similar measurement on superlattices is found effective in evaluating the possible asymmetry of the structure and the spatial distribution of scatterers.

Original languageEnglish
Pages (from-to)703-705
Number of pages3
JournalPhysica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume117-118
Issue numberPt II
Publication statusPublished - 1982 Jan 1
Externally publishedYes
EventProc of the Inst Conf on the Phys of Semicond, 16th - Montpellier, Fr
Duration: 1982 Sep 61982 Sep 10

ASJC Scopus subject areas

  • Engineering(all)

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