Effect of tangential magnetic field on the two-dimensional electron transport in NAlGaAs/GaAs superlattices and hetero-interfaces

H. Sasaki, H. Ohno, S. Nishi, J. Yoshino

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Magnetoresistance Δρ{variant}/ρ{variant}o of a two dimensional electron gas at NAlGaAs/GaAs heterojunction interfaces and superlattices is studied for the magnetic field, By, parallel to heterojunctions. Δρ{variant}/ρ{variant}o at the interface is found to contain a term having linear dependence both on By and on electric field parallel to the current, Ex. This is ascribed to the deformation of wavefunction by the Lorentz force, which affects the electron scattering by impurities distributed only on one side of the interface. Similar measurement on superlattices is found effective in evaluating the possible asymmetry of the structure and the spatial distribution of scatterers.

Original languageEnglish
Pages (from-to)703-705
Number of pages3
JournalPhysica B+C
Volume117-118
Issue numberPART 2
DOIs
Publication statusPublished - 1983 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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