Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

Kenji Shiojima, Takashi Makimura, Takashi Maruyama, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Hamki Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science