Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

Kenji Shiojima, Takashi Makimura, Takashi Maruyama, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Hamki Yokoyama

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalECS Transactions
Volume1
Issue number2
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

ASJC Scopus subject areas

  • Engineering(all)

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