We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.
|Number of pages||4|
|Publication status||Published - 2005 Dec 1|
|Event||43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 21
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