Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient

Tomiyuki Arakawa, Yoshio Yamashita, Hiroshi Hoga, Shuichi Noda, Hisashi Fukuda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

Original languageEnglish
Pages (from-to)3364-3366
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number24
DOIs
Publication statusPublished - 1993 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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