Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient

Tomiyuki Arakawa; Yoshio Yamashita; Hiroshi Hoga; Shuichi Noda; Hisashi Fukuda

doi:10.1063/1.110146

Effect of synchrotron radiation on electrical characteristics of SiO _xN_y thin films formed by rapid thermal processing in a N₂O ambient

Tomiyuki Arakawa, Yoshio Yamashita, Hiroshi Hoga, Shuichi Noda, Hisashi Fukuda

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The synchrotron radiation durability of SiO_xN_y films (about 10 nm) formed by rapid thermal processing in a N₂O ambient was studied. No significant difference between the flat-band voltage of SiO _xN_y-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm², and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

Original language	English
Pages (from-to)	3364-3366
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	24
DOIs	https://doi.org/10.1063/1.110146
Publication status	Published - 1993 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient",

abstract = "The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.",

author = "Tomiyuki Arakawa and Yoshio Yamashita and Hiroshi Hoga and Shuichi Noda and Hisashi Fukuda",

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T1 - Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient

AU - Arakawa, Tomiyuki

AU - Yamashita, Yoshio

AU - Hoga, Hiroshi

AU - Noda, Shuichi

AU - Fukuda, Hisashi

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

AB - The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

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