Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p +-GaAs layers were grown on (001)-oriented GaAs substrates by intermittent supply of AsH3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.

Original languageEnglish
Pages (from-to)421-424
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Be-doping
  • GaAs
  • Molecular layer epitaxy
  • Surface reaction
  • Surface stoichiometry

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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