Effect of surface polarity on gallium adsorption on 6H-SiC surfaces

L. Li, C. Tindall, Y. Hasegawa, T. Sakurai

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    4 Citations (Scopus)

    Abstract

    We have performed the first scanning tunneling microscopy (STM) study of gallium adsorption on both the Si-terminated 6H-SiC(0001) (√3 × √3) and C-terminated 6H-SiC(0001) (2√2 × 2√3) surfaces. The structure of the Ga terminated 6H-SiC surface showed strong polarity dependence. On the Si-terminated √3 × √3 surface, parallel rows of Ga atoms arranged in three different domains oriented at 120° with respect to each other at 1 ML coverage were observed. On the C-terminated 2√3 × 2√3 surface, sets of two concentric rings formed an overall 4√3 × 4√3 reconstruction at 1 ML coverage. We propose a structural model for the 4√3 × 4√3 structure which explains the STM image.

    Original languageEnglish
    Pages (from-to)2776-2778
    Number of pages3
    JournalApplied Physics Letters
    Volume71
    Issue number19
    DOIs
    Publication statusPublished - 1997 Nov 10

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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