Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)

H. Totsuka; E. Kurtz; T. Hanada; Z. Zhu; T. Yao

doi:10.1016/S0169-4332(98)00147-0

Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)

H. Totsuka, E. Kurtz, T. Hanada, Z. Zhu, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs(001) is investigated by means of reflection high energy electron diffraction (RHEED) and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs(001) surface is reviewed by AFM images.

Original language	English
Pages (from-to)	742-746
Number of pages	5
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00147-0
Publication status	Published - 1998
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(98)00147-0

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title = "Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)",

abstract = "The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs(001) is investigated by means of reflection high energy electron diffraction (RHEED) and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs(001) surface is reviewed by AFM images.",

author = "H. Totsuka and E. Kurtz and T. Hanada and Z. Zhu and T. Yao",

year = "1998",

doi = "10.1016/S0169-4332(98)00147-0",

language = "English",

volume = "130-132",

pages = "742--746",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

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TY - JOUR

T1 - Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

AU - Totsuka, H.

AU - Kurtz, E.

AU - Hanada, T.

AU - Zhu, Z.

AU - Yao, T.

PY - 1998

Y1 - 1998

N2 - The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs(001) is investigated by means of reflection high energy electron diffraction (RHEED) and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs(001) surface is reviewed by AFM images.

AB - The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs(001) is investigated by means of reflection high energy electron diffraction (RHEED) and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs(001) surface is reviewed by AFM images.

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DO - 10.1016/S0169-4332(98)00147-0

M3 - Conference article

AN - SCOPUS:0032099235

SN - 0169-4332

VL - 130-132

SP - 742

EP - 746

JO - Applied Surface Science

JF - Applied Surface Science

Y2 - 27 October 1997 through 30 October 1997

ER -

Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)

Abstract

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