Effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)

H. Totsuka, E. Kurtz, T. Hanada, Z. Zhu, T. Yao

Research output: Contribution to journalConference article

Abstract

The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs(001) is investigated by means of reflection high energy electron diffraction (RHEED) and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs(001) surface is reviewed by AFM images.

Original languageEnglish
Pages (from-to)742-746
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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