Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode

S. Shindo, Y. Sutou, J. Koike, Y. Saito, Y. H. Song

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The contact resistivity, ρ c, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρ c between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρ c of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρ c of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρ c in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.

Original languageEnglish
Pages (from-to)2731-2736
Number of pages6
JournalMRS Advances
Volume1
Issue number39
DOIs
Publication statusPublished - 2016

Keywords

  • amorphous
  • memory
  • oxidation

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

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