-The effect of surface cleaning of Si(lOO) substrate on the exchange coupling field, Hex was investigated for Ni-Fe/25 at% Ni-Mn films. H& measured at room temperature rapidly increased when the substrate surface was slightly (about 10 A) etched by RF plasma just before film deposition, especially in the films with very thin (50 A) Ni-Fe layer. From structural analysis of the films, and view of the temperature dependence of Hex, it was concluded that the increase of Hewas caused by the enlargement of y-Ni-Mn grains epitaxially grown on the underlying Ni-Fe grains.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering