Abstract
The characteristics of silicon etching using radio-frequency (rf) substrate biased ultrahigh-frequency (UHF) plasma determined by using a Cl2 etchant were investigated. The silicon etching rate and the etching profile were improved by decreasing the substrate bias frequency to less than 600 kHz. It is suggested that a large number of negative chlorine ions is generated in the high-density, low-pressure UHF plasma because of the extremely low electron temperature. The low-frequency substrate bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low-frequency biased UHF plasma can be used to achieve high-rate, highly anisotropic, and microloading-free silicon etching with a 600 kHz rf substrate bias.
Original language | English |
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Pages (from-to) | 3004-3009 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 14 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1996 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films