Effect of supplied substrate bias frequency in ultrahigh-frequency plasma discharge for precise etching processes

Seiji Samukawa, Hiroto Ohtake, Tsutomu Tsukada

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The characteristics of silicon etching using radio-frequency (rf) substrate biased ultrahigh-frequency (UHF) plasma determined by using a Cl2 etchant were investigated. The silicon etching rate and the etching profile were improved by decreasing the substrate bias frequency to less than 600 kHz. It is suggested that a large number of negative chlorine ions is generated in the high-density, low-pressure UHF plasma because of the extremely low electron temperature. The low-frequency substrate bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low-frequency biased UHF plasma can be used to achieve high-rate, highly anisotropic, and microloading-free silicon etching with a 600 kHz rf substrate bias.

Original languageEnglish
Pages (from-to)3004-3009
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number6
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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