Effect of substrate temperature on the properties of heavily Mn-doped GaAs

H. J. Lee; D. Chiba; F. Matsukura; H. Ohno

doi:10.1016/j.jcrysgro.2006.11.155

Effect of substrate temperature on the properties of heavily Mn-doped GaAs

H. J. Lee, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.

Original language	English
Pages (from-to)	264-267
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.155
Publication status	Published - 2007 Apr

Keywords

A1. RHEED
A3. High-temperature growth
A3. Molecular beam epitaxy
B1. (Ga,Mn)As
B2. Diluted magnetic semiconductor
B2. III-V semiconductor

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.11.155

Cite this

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title = "Effect of substrate temperature on the properties of heavily Mn-doped GaAs",

abstract = "We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.",

keywords = "A1. RHEED, A3. High-temperature growth, A3. Molecular beam epitaxy, B1. (Ga,Mn)As, B2. Diluted magnetic semiconductor, B2. III-V semiconductor",

author = "Lee, {H. J.} and D. Chiba and F. Matsukura and H. Ohno",

note = "Funding Information: This work was in part supported by the IT Program of RR2002 from MEXT.",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.155",

language = "English",

volume = "301-302",

pages = "264--267",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS.",

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TY - JOUR

T1 - Effect of substrate temperature on the properties of heavily Mn-doped GaAs

AU - Lee, H. J.

AU - Chiba, D.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was in part supported by the IT Program of RR2002 from MEXT.

PY - 2007/4

Y1 - 2007/4

N2 - We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.

AB - We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.

KW - A1. RHEED

KW - A3. High-temperature growth

KW - A3. Molecular beam epitaxy

KW - B1. (Ga,Mn)As

KW - B2. Diluted magnetic semiconductor

KW - B2. III-V semiconductor

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U2 - 10.1016/j.jcrysgro.2006.11.155

DO - 10.1016/j.jcrysgro.2006.11.155

M3 - Article

AN - SCOPUS:33947315430

SN - 0022-0248

VL - 301-302

SP - 264

EP - 267

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

Effect of substrate temperature on the properties of heavily Mn-doped GaAs

Abstract

Keywords

ASJC Scopus subject areas

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