Effect of substrate temperature on the properties of heavily Mn-doped GaAs

H. J. Lee, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.

Original languageEnglish
Pages (from-to)264-267
Number of pages4
JournalJournal of Crystal Growth
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Apr


  • A1. RHEED
  • A3. High-temperature growth
  • A3. Molecular beam epitaxy
  • B1. (Ga,Mn)As
  • B2. Diluted magnetic semiconductor
  • B2. III-V semiconductor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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