TY - GEN
T1 - Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE
AU - Klangtakai, P.
AU - Sanorpim, S.
AU - Kuboya, S.
AU - Katayama, R.
AU - Onabe, K.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A > (001) > (011). While, the growth rate is in the order, (001) > (011) > (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes.
AB - The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A > (001) > (011). While, the growth rate is in the order, (001) > (011) > (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes.
KW - GaAsN
KW - High resolution X-ray diffraction
KW - MOVPE
KW - Raman scattering
KW - Substrate-surface orientation
UR - http://www.scopus.com/inward/record.url?scp=62949234277&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=62949234277&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/amr.55-57.825
DO - 10.4028/www.scientific.net/amr.55-57.825
M3 - Conference contribution
AN - SCOPUS:62949234277
SN - 0878493565
SN - 9780878493562
T3 - Advanced Materials Research
SP - 825
EP - 828
BT - Smart Materials - International Conference on Smart Materials Smart/Intelligent Materials and Nanotechnology, (Smartmat-'08) and the 2nd International Workshop on Functional Materials and Nanomaterial
PB - Trans Tech Publications
T2 - International Conference on Smart Materials-Smart/Intelligent Materials and Nano Technology, (SmartMat-'08) and 2nd International Workshop on Functional Materials and Nanomaterials (IWOFM-2)
Y2 - 22 April 2008 through 25 April 2008
ER -