Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE

P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A > (001) > (011). While, the growth rate is in the order, (001) > (011) > (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes.

Original languageEnglish
Title of host publicationSmart Materials - International Conference on Smart Materials Smart/Intelligent Materials and Nanotechnology, (Smartmat-'08) and the 2nd International Workshop on Functional Materials and Nanomaterial
PublisherTrans Tech Publications
Pages825-828
Number of pages4
ISBN (Print)0878493565, 9780878493562
DOIs
Publication statusPublished - 2008
EventInternational Conference on Smart Materials-Smart/Intelligent Materials and Nano Technology, (SmartMat-'08) and 2nd International Workshop on Functional Materials and Nanomaterials (IWOFM-2) - Chiang Mai, Thailand
Duration: 2008 Apr 222008 Apr 25

Publication series

NameAdvanced Materials Research
Volume55-57
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Smart Materials-Smart/Intelligent Materials and Nano Technology, (SmartMat-'08) and 2nd International Workshop on Functional Materials and Nanomaterials (IWOFM-2)
CountryThailand
CityChiang Mai
Period08/4/2208/4/25

Keywords

  • GaAsN
  • High resolution X-ray diffraction
  • MOVPE
  • Raman scattering
  • Substrate-surface orientation

ASJC Scopus subject areas

  • Engineering(all)

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