The effects of stress on the magnetization change for tertiary recrystallized silicon iron has been investigated. The processes of magnetization change due to tensile stress at various points on the hysteresis curve have been made clear. This material has an extremely small volume portion of 90° domains compared with high-grade commercial grain-oriented silicon iron sheet.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics