Effect of strain on the energetics and kinetics of dissociation of Sb4 on Ge(001)

Jian Tao Wang, Changfeng Chen, E. G. Wang, Ding Sheng Wang, H. Mizuseki, Y. Kawazoe

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A comprehensive search for the precursor dissociation of antimony tetramers on Ge(001) with strain was carried out using first-principles calculations. In contrast to previous theoretical studies on Si(001) [Phys. Rev. Lett. 97, 046103 (2006)] and in agreement with recent experiments, we reveal a square intermediate anisotropy dissociation pathway across the surface dimer row, where the dissociation energetics and kinetics can be qualitatively altered by the strain and lead to divergent dissociation pathways and patterns with substrate-dimer-bond breaking due to the weak interactions between Ge-Ge and Sb-Ge bonds.

Original languageEnglish
Article number073403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number7
DOIs
Publication statusPublished - 2008 Aug 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effect of strain on the energetics and kinetics of dissociation of Sb4 on Ge(001)'. Together they form a unique fingerprint.

  • Cite this