Effect of sputtering power on optoelectronic properties of iron-doped indium saving indium-tin oxide thin films

M. Ohtsuka, R. Sergiienko, Svitlana Stepanivna Petrovska, B. Ilkiv, T. Nakamura

Research output: Contribution to journalArticlepeer-review

Abstract

Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indi-um oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe2O3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet– Visible–Infrared (UV–Vis–IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 µΩ⋅cm and trans-mittance over 85% are obtained for thin films sputtered under optimum con-ditions. Iron doping results in significant improvement in films transmit-tance and increasing the crystallization temperature of ITO thin films.

Original languageEnglish
Pages (from-to)941-952
Number of pages12
JournalMetallofizika i Noveishie Tekhnologii
Volume41
Issue number7
DOIs
Publication statusPublished - 2019

Keywords

  • Electrical properties
  • Iron-doped indium-tin oxide
  • Magnetron direct current sputtering
  • Optical properties
  • Radio frequency deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mathematics(all)
  • Condensed Matter Physics
  • Metals and Alloys

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