P-type double barrier resonant tunneling diodes (RTD) with the single Si 0.6Ge 0.4 quantum well and double Si 0.6Ge 0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si 1-yC y layer on the characteristics of the devices was shown by comparing the current-voltage (I - V) characteristics of RTD's of the barriers of Si layers with that of Si/Si 1-yC y/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si 1-yC y/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si 1-yC y/Si barriers. The possible mechanism for the observed I-V characteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si 1-yC y layers in the Si/Si 1-yC y/Si barriers.
ASJC Scopus subject areas
- Physics and Astronomy(all)