Effect of Si/Si 1-yC y/Si barriers on the characteristics of Si 1-xGe x/Si resonant tunneling structures

Ping Han, Xue Mei Cheng, Masao Sakuraba, Young Cheon Jeong, Takashi Matsuura, Junichi Murota

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3 Citations (Scopus)


P-type double barrier resonant tunneling diodes (RTD) with the single Si 0.6Ge 0.4 quantum well and double Si 0.6Ge 0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si 1-yC y layer on the characteristics of the devices was shown by comparing the current-voltage (I - V) characteristics of RTD's of the barriers of Si layers with that of Si/Si 1-yC y/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si 1-yC y/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si 1-yC y/Si barriers. The possible mechanism for the observed I-V characteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si 1-yC y layers in the Si/Si 1-yC y/Si barriers.

Original languageEnglish
Pages (from-to)844-846
Number of pages3
JournalChinese Physics Letters
Issue number11
Publication statusPublished - 2000 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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