Effect of SiO2 fence on atomic step flow in chemical etching of Si surface

Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
Publication statusPublished - 2003 May 15

Keywords

  • Anodic oxidation
  • Atomic force microscope (AFM)
  • Atomic step flow
  • Atomically flat surface
  • Step free
  • Step pattern controlling
  • Surface roughening
  • Wet etching

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effect of SiO2 fence on atomic step flow in chemical etching of Si surface'. Together they form a unique fingerprint.

Cite this