Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Naozumi Terada; Hiroki Ogawa; Kazunori Moriki; Akinobu Teramoto; Koji Makihara; Mizuho Morita; Tadahiro Ohmi; Takeo Hattor

Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Naozumi Terada, Hiroki Ogawa, Kazunori Moriki, Akinobu Teramoto, Koji Makihara, Mizuho Morita, Tadahiro Ohmi, Takeo Hattor

Research output: Contribution to conference › Paper › peer-review

Abstract

The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H₂O₂:H₂O=1:1:1 maintained at 90°C were decomposed at 850°C.

Original language	English
Pages	571-573
Number of pages	3
Publication status	Published - 1991 Jan 1
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

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Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films. / Terada, Naozumi; Ogawa, Hiroki; Moriki, Kazunori; Teramoto, Akinobu; Makihara, Koji; Morita, Mizuho; Ohmi, Tadahiro; Hattor, Takeo.

1991. 571-573 Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .

Research output: Contribution to conference › Paper › peer-review

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abstract = "The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.",

author = "Naozumi Terada and Hiroki Ogawa and Kazunori Moriki and Akinobu Teramoto and Koji Makihara and Mizuho Morita and Tadahiro Ohmi and Takeo Hattor",

year = "1991",

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language = "English",

pages = "571--573",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

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T1 - Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

AU - Terada, Naozumi

AU - Ogawa, Hiroki

AU - Moriki, Kazunori

AU - Teramoto, Akinobu

AU - Makihara, Koji

AU - Morita, Mizuho

AU - Ohmi, Tadahiro

AU - Hattor, Takeo

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.

AB - The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.

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M3 - Paper

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SP - 571

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T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Abstract

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ASJC Scopus subject areas

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