The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas