Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Naozumi Terada; Hiroki Ogawa; Kazunori Moriki; Akinobu Teramoto; Koji Makihara; Mizuho Morita; Tadahiro Ohmi; Takeo Hattor

Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Naozumi Terada, Hiroki Ogawa, Kazunori Moriki, Akinobu Teramoto, Koji Makihara, Mizuho Morita, Tadahiro Ohmi, Takeo Hattor

Research output: Contribution to conference › Paper

Abstract

The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H₂O₂:H₂O=1:1:1 maintained at 90°C were decomposed at 850°C.

Original language	English
Pages	571-573
Number of pages	3
Publication status	Published - 1991 Jan 1
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films'. Together they form a unique fingerprint.

Cite this

Terada, N., Ogawa, H., Moriki, K., Teramoto, A., Makihara, K., Morita, M., Ohmi, T., & Hattor, T. (1991). Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films. 571-573. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .

Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films. / Terada, Naozumi; Ogawa, Hiroki; Moriki, Kazunori; Teramoto, Akinobu; Makihara, Koji; Morita, Mizuho; Ohmi, Tadahiro; Hattor, Takeo.

1991. 571-573 Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .

Research output: Contribution to conference › Paper

@conference{3e5288bb78eb4b11bf65a487d7e8bfe9,

title = "Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films",

abstract = "The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.",

author = "Naozumi Terada and Hiroki Ogawa and Kazunori Moriki and Akinobu Teramoto and Koji Makihara and Mizuho Morita and Tadahiro Ohmi and Takeo Hattor",

year = "1991",

month = jan,

day = "1",

language = "English",

pages = "571--573",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

AU - Terada, Naozumi

AU - Ogawa, Hiroki

AU - Moriki, Kazunori

AU - Teramoto, Akinobu

AU - Makihara, Koji

AU - Morita, Mizuho

AU - Ohmi, Tadahiro

AU - Hattor, Takeo

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.

AB - The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.

UR - http://www.scopus.com/inward/record.url?scp=0025901374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025901374&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025901374

SP - 571

EP - 573

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -