Abstract
The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.
Original language | English |
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Pages | 571-573 |
Number of pages | 3 |
Publication status | Published - 1991 Jan 1 |
Externally published | Yes |
Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29 |
Other
Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
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City | Yokohama, Jpn |
Period | 91/8/27 → 91/8/29 |
ASJC Scopus subject areas
- Engineering(all)