Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films

Naozumi Terada, Hiroki Ogawa, Kazunori Moriki, Akinobu Teramoto, Koji Makihara, Mizuho Morita, Tadahiro Ohmi, Takeo Hattor

Research output: Contribution to conferencePaper

Abstract

The chemical structures of thermal oxides were found to be affected strongly by the condition of silicon wafer in-situ cleaning. Based on this phenomena, the optimum condition for In the case of heating native oxides at 900°C the optimum condition for obtaining smooth and clean surface could not be found. The minimum amount of suboxides were found in thermal oxides when the native oxides formed in a solution with composition of HCl:H2O2:H2O=1:1:1 maintained at 90°C were decomposed at 850°C.

Original languageEnglish
Pages571-573
Number of pages3
Publication statusPublished - 1991 Jan 1
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Terada, N., Ogawa, H., Moriki, K., Teramoto, A., Makihara, K., Morita, M., Ohmi, T., & Hattor, T. (1991). Effect of silicon wafer in-situ cleaning on the structure of ultrathin silicon oxide films. 571-573. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .