Effect of silicon preimplantation on carbon nitride formation by nitrogen implantation into glassy carbon

K. Takahiro, H. Habazaki, S. Nagata, M. Kishimoto, S. Yamaguchi, F. Nishiyama, S. Nimori

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied the effects of Si-preimplantation on the formation of carbon nitride by N implantation into glassy carbon (GC). Structure, composition and chemical bonding of the Si-implanted carbon nitride layers are examined by using Backscattering spectroscopy (BS), X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Raman spectroscopy reveals that the carbon nitride layer containing up to 8 at.% Si is amorphous and has an sp2 bonded structure with a small amount of carbon nitrogen bonds. It was revealed from backscattering measurements that the Si-preimplantation increases the saturation concentration of the implanted N atoms; it increases from 26 at.% N for the nitride layer without Si-preimplantation to 35 at.% for the Si-preimplanted nitride. In addition, Si atoms in the nitride layer suppress oxygen incorporation during N implantation.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume152
Issue number2
DOIs
Publication statusPublished - 1999 May

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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