Effect of Si-skeleton dimensionality on optical and electrical properties of poly(methylpenylsilylene) and poly(phenylsilyne)

A. Watanabe, Y. Tsutsumi, M. Matsuda

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

A comparative study of the optical and electrical properties of poly(methylphenylsilylene) and poly(phenylsilyne) was carried out. Poly(phenylsilyne), which has a Si-network structure, showed a broad absorption band extending to 420 nm, while poly(methylphenylsilylene) with a linear Si skeleton showed a sharp σ-σ* absorption band at 334 nm. The broad emission spectrum and the low fluorescence quantum yield of poly(phenylsilyne) suggest a distribution of trapping sites in the Si skeleton. The network poly(phenylsilyne) did not show an improvement in electric conductivity because of the carrier trapping at the sites. Molecular weight measurements on poly(methylphenylsilylene) after iodine doping showed that cleavage of SiSi bonds occurs with extensive doping.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalSynthetic Metals
Volume74
Issue number3
DOIs
Publication statusPublished - 1995 Oct

Keywords

  • Electrical properties
  • Optical properties
  • Poly(methylphenylsilylene)
  • Poly(phenylsilyne)
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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