Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor

S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

An effect of the time constant of the measurement setup on a breakdown behavior of SiC MOS capacitors with aluminum gate electrode was investigated. For this experiment, an additional series resistance was inserted into the TDDB and TZDB measurement system. With respect to TDDB, SBD occurred more frequently when the additional series resistance was inserted. It is speculated that the joule heat generated at the moment of breakdown was not sufficient to form a low resistance conduction path between the gate electrode and substrate. With respect to TZDB, a sequential formation of separated groups of concaves was observed when the additional series resistance was inserted. It is speculated that the post-breakdown resistance was high enough to cause 'self-healing' as observed in the TDDB measurement. These results highlight the generation and dissipation of the heat at the time of the breakdown is one of the causes that determine HBD or SBD of SiC MOS capacitors.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-75
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
Publication statusPublished - 2015 Aug 25
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan, Province of China
Duration: 2015 Jun 292015 Jul 2

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Other

Other22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan, Province of China
CityHsinchu
Period15/6/2915/7/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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