Effect of self-heating on time-dependent dielectric breakdown in ultrathin MgO magnetic tunnel junctions for spin torque transfer switching magnetic random access memory

Keiji Hosotani, Makoto Nagamine, Tomomasa Ueda, Hisanori Aikawa, Sumio Ikegawa, Yoshiaki Asao, Hiroaki Yoda, Akihiro Nitayama

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Spin torque transfer switching magnetic random access memory (Spin-MRAM) using MgO-magnetic tunnel junction (MTJ) is considered to be the most promising candidate for high-density, high-speed, and non-volatile RAM. Notwithstanding its excellent potential, the breakdown mechanism of MgO-MTJ has not been well understood although a thorough understanding is essential for commercialization of Spin-MRAM. In this paper, we demonstrate for the first time the modeling of dielectric breakdown phenomena of MgO-MTJ by time-dependent dielectric breakdown (TDDB) measurement concerning the effect of self-heating using simulation and conclude that E-model with the effect of self-heating at MgO-MTJ during current stress (power) removed gives the best fitting as a degradation model of MgO-MTJ ultrathin dielectrics.

Original languageEnglish
Article number04DD15
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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