Abstract
In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.
Original language | English |
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Pages (from-to) | 6112-6115 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 14 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2014 Aug |
Keywords
- InGaN
- Metalorganic vapor phase epitaxy
- Nitridation
- Polarity
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics