Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka

Research output: Contribution to journalArticlepeer-review

Abstract

In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

Original languageEnglish
Pages (from-to)6112-6115
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number8
DOIs
Publication statusPublished - 2014 Aug

Keywords

  • InGaN
  • Metalorganic vapor phase epitaxy
  • Nitridation
  • Polarity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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