Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

J. H. Choi; K. Shojiki; T. Tanikawa; T. Hanada; R. Katayama; T. Matsuoka

doi:10.1166/jnn.2014.8306

Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka

Research output: Contribution to journal › Article › peer-review

Abstract

In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

Original language	English
Pages (from-to)	6112-6115
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2014.8306
Publication status	Published - 2014 Aug

Keywords

InGaN
Metalorganic vapor phase epitaxy
Nitridation
Polarity

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2014.8306

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Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy. / Choi, J. H.; Shojiki, K.; Tanikawa, T.; Hanada, T.; Katayama, R.; Matsuoka, T.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 8, 08.2014, p. 6112-6115.

Research output: Contribution to journal › Article › peer-review

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abstract = "In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.",

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author = "Choi, {J. H.} and K. Shojiki and T. Tanikawa and T. Hanada and R. Katayama and T. Matsuoka",

year = "2014",

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AU - Choi, J. H.

AU - Shojiki, K.

AU - Tanikawa, T.

AU - Hanada, T.

AU - Katayama, R.

AU - Matsuoka, T.

PY - 2014/8

Y1 - 2014/8

N2 - In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

AB - In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

KW - InGaN

KW - Metalorganic vapor phase epitaxy

KW - Nitridation

KW - Polarity

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Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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