Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

J. H. Choi; K. Shojiki; T. Tanikawa; T. Hanada; R. Katayama; T. Matsuoka

doi:10.1166/jnn.2014.8306

Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka

Research output: Contribution to journal › Article › peer-review

Abstract

In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

Original language	English
Pages (from-to)	6112-6115
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2014.8306
Publication status	Published - 2014 Aug

Keywords

InGaN
Metalorganic vapor phase epitaxy
Nitridation
Polarity

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2014.8306

Fingerprint Dive into the research topics of 'Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy'. Together they form a unique fingerprint.

Cite this

Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy. / Choi, J. H.; Shojiki, K.; Tanikawa, T.; Hanada, T.; Katayama, R.; Matsuoka, T.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 8, 08.2014, p. 6112-6115.

Research output: Contribution to journal › Article › peer-review

@article{d82f1e256e7c449aacf062b47da50bae,

title = "Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy",

abstract = "In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.",

keywords = "InGaN, Metalorganic vapor phase epitaxy, Nitridation, Polarity",

author = "Choi, {J. H.} and K. Shojiki and T. Tanikawa and T. Hanada and R. Katayama and T. Matsuoka",

year = "2014",

month = aug,

doi = "10.1166/jnn.2014.8306",

language = "English",

volume = "14",

pages = "6112--6115",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "8",

}

TY - JOUR

T1 - Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

AU - Choi, J. H.

AU - Shojiki, K.

AU - Tanikawa, T.

AU - Hanada, T.

AU - Katayama, R.

AU - Matsuoka, T.

PY - 2014/8

Y1 - 2014/8

N2 - In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

AB - In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

KW - InGaN

KW - Metalorganic vapor phase epitaxy

KW - Nitridation

KW - Polarity

UR - http://www.scopus.com/inward/record.url?scp=84906543020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906543020&partnerID=8YFLogxK

U2 - 10.1166/jnn.2014.8306

DO - 10.1166/jnn.2014.8306

M3 - Article

AN - SCOPUS:84906543020

VL - 14

SP - 6112

EP - 6115

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 8

ER -

Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this